DocumentCode
1244703
Title
1677 V, 5.7 mΩ·cm2 4H-SiC BJTs
Author
Zhang, Jianhui ; Alexandrov, Petre ; Zhao, Jian H. ; Burke, Terry
Author_Institution
Electr. & Comput. Eng. Dept., State Univ. of New Jersey, Piscataway, NJ, USA
Volume
26
Issue
3
fYear
2005
fDate
3/1/2005 12:00:00 AM
Firstpage
188
Lastpage
190
Abstract
This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (R_ON). A single BJT cell with an active area of 0.61 mm2 achieves an open base collector-to-emitter blocking voltage (Vceo) of 1677 V and conducts up to 3.2 A at a forward voltage drop of VCE=3.0 V, corresponding to a low R_ON of 5.7 mΩ·cm2 up to Jc=525 A/cm2 and a record high value of VB2/RSP_ON of 493 MW/cm2.
Keywords
bipolar transistors; power transistors; silicon compounds; wide band gap semiconductors; forward voltage drop; high blocking voltage; low specific on-resistance; open base collector-to-emitter blocking voltage; power 4H-SiC bipolar junction transistor; power transistors; silicon carbide; single BJT cell; Conductivity; Etching; Fabrication; Helium; Low voltage; MOSFET circuits; Military computing; Plasma temperature; Power transistors; Silicon carbide; Bipolar junction transistors (BJTs); power transistors; silicon carbide;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.843928
Filename
1397855
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