Title :
A 1 cm×1 cm In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array
Author :
Clark, William R. ; Davis, Andrew ; Roland, Mark ; Vaccaro, Kenneth
Author_Institution :
OptoGration Inc., Haverhill, MA, USA
Abstract :
We report a 1 cm×1 cm array of 100 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V. The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 APDs had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; semiconductor epitaxial layers; 1 cm; 10.3 nA; 140 GHz; 28.7 V; 6.2 GHz; APD array; In0.53Ga0.47As-In0.52Al0.48As; avalanche photodiode array; breakdown voltage; dark current; epitaxial growth nonuniformity; standard deviation; three-dimensional imaging applications; Avalanche photodiodes; Bandwidth; Dark current; Epitaxial growth; Force sensors; Indium phosphide; Infrared detectors; Molecular beam epitaxial growth; Optical imaging; Voltage; Avalanche multiplication; avalanche photodiode (APD); infrared detector; photodetector; photodiode; photodiode array;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.860032
