Realization of novel low-loss monolithically integrated passive waveguide mode converters

Author

Holmes, B.M. ; Hutchings, D.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK

Volume

18

Issue

1

fYear

2006

Firstpage

43

Lastpage

45

Abstract

The novel design and fabrication of monolithically integrated passive waveguide mode converters (WMCs), realized through the utilization of the reactive ion-etch lag (RIE Lag) phenomenon, is reported. The low-loss GaAs-AlGaAs WMCs have been characterized over a wavelength range of 900-940 nm, resulting in TE-TM (TM-TE) mode conversion with efficiencies of greater than 96% and low-loss devices with conversion lengths as short as 150 μm. The properties and characteristics of the fully integrated WMCs, fabricated with a single masking and etch process, are in agreement with theoretical predictions.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical design techniques; optical fabrication; optical losses; optical waveguides; sputter etching; 150 mum; 900 to 940 nm; GaAs-AlGaAs; TE-TM mode conversion; integrated passive waveguide; low-loss waveguide; monolithic integration; reactive ion-etch lag; waveguide design; waveguide fabrication; waveguide mode converters; Etching; Isolators; Optical device fabrication; Optical devices; Optical polarization; Optical waveguide components; Optical waveguide theory; Optical waveguides; Wavelength conversion; Wavelength division multiplexing; Optical device fabrication; optical isolators; waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.859987

Filename

1546031