Theoretical investigations of [110] IV-VI lead salt edge-emitting lasers

Author

Lu, Xiaoliang ; Shi, Zhisheng

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Oklahoma, Norman, OK, USA

Volume

41

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

308

Lastpage

315

Abstract

Theoretical simulations on a new [110]-orientated IV-VI lead-salt midinfrared (IR) edge-emitting laser are performed in comparison with the conventional [100] orientated laser. The modal gain of quantum-well (QW) structure on [110] orientation is significantly higher than that on the [100] orientation. Light versus current (L-I) characteristics at different operation temperatures are simulated by solving the coupled rate equations. The maximum operation temperature of [110] laser is 70 degree higher than that of conventional [100] laser. To further improve the laser performance a new Si₃N₄ clad laser structure is proposed to improve the heat dissipation. The effects of other parameters on the performance of the lasers, such as Auger recombination, Schockley-Read recombination, facet reflectivity and cavity length, are also investigated. The simulated results show that with optimized laser structure and modestly reduced Auger recombination [110] IV-VI lead-salt edge-emitting laser could produce output power of about 10 mW at room temperature.

Keywords

IV-VI semiconductors; electron-hole recombination; infrared sources; laser cavity resonators; laser cooling; laser theory; lead compounds; quantum well lasers; reflectivity; silicon compounds; surface emitting lasers; 10 mW; 20 degC; Auger recombination; Schockley-Read recombination; Si₃N₄; Si₃N₄ clad laser; [110] IV-VI lead salt lasers; [110] orientation; cavity length; coupled rate equations; edge-emitting lasers; facet reflectivity; heat dissipation; midinfrared lasers; modal gain; optimized laser structure; quantum well structure; room temperature; Differential equations; Laser modes; Laser theory; Optical coupling; Power generation; Power lasers; Quantum well lasers; Radiative recombination; Reflectivity; Temperature; IV–VI lead salt; [110] orientation; mid-IR lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.841607

Filename

1397877