Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

Author

Ray, Samit K. ; Groom, K.M. ; Beattie, M.D. ; Liu, H.Y. ; Hopkinson, M. ; Hogg, R.A.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK

Volume

18

Issue

1

fYear

2006

Firstpage

58

Lastpage

60

Abstract

We propose and demonstrate a technique for tailoring the emission bandwidth of /spl sim/1.3 μm quantum dot superluminescent light-emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum dots; semiconductor quantum wells; spectral line broadening; superradiance; 1.3 mum; InAs-InGaAs; broad-band light-emitting diodes; compositional modulation; dot-in well structure; emission bandwidth; emission broadening; indium compositions; quantum dots; quantum wells; superluminescent light-emitting diodes; Bandwidth; Chirp; Indium gallium arsenide; Light emitting diodes; Optical saturation; Quantum dots; Stationary state; Stimulated emission; Superluminescent diodes; US Department of Transportation; Quantum dots (QDs); quantum wells; superluminescent diodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.860028

Filename

1546036