Evidence of strong phonon-assisted resonant intervalley up-transfer for electrons in type-II GaAs-AlAs Superlattices

Author

Mu, Xiaodong ; Ding, Yujie J. ; Wang, Zhiming ; Salamo, Gregory J.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

Volume

41

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

337

Lastpage

343

Abstract

We demonstrate that interface optical phonons can efficiently pump electrons from the quasi-X states to the quasi-Γ states in short-period type-II GaAs-AlAs superlattices. As a result, peculiar behaviors on these superlattices have been observed. First, photoluminescence intensity for the quasi-direct transition drastically increases as the temperature or pump power increases. Second, the dependence of the integrated photoluminescence intensity on the pump power exhibits a square power law.

Keywords

III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; interface phonons; photoluminescence; semiconductor superlattices; GaAs-AlAs superlattices; GaAs-AlGaAs; conduction band electrons; electron pumping; interface optical phonons; photoluminescence intensity; quasiX states; quasidirect transition; quasigamma states; resonant intervalley uptransfer; short-period superlattices; square power law; strong phonon-assisted resonance; type-II superlattices; Electron optics; Gallium arsenide; Laser sintering; Optical pumping; Optical scattering; Phonons; Photoluminescence; Resonance; Semiconductor superlattices; Temperature; Charge carrier processes; phonons; scattering; semiconductor superlattices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.841613

Filename

1397879