Title :
Narrow-linewidth asymmetric cladding distributed Bragg reflector semiconductor lasers at 850 nm
Author :
Price, R.K. ; Borchardt, J.J. ; Elarde, V.C. ; Swint, R.B. ; Coleman, J.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana-Champaign, IL, USA
Abstract :
Narrow-linewidth ridge-waveguide distributed Bragg reflector (DBR) single quantum well lasers for spectroscopic applications have been demonstrated. These devices, which were fabricated in the AlGaAs-GaAs material system, use an asymmetric cladding and a first-order surface grating to realize single-mode operation in the range from 850 to 860 nm. To our knowledge, these devices contain the shortest period surface etched gratings DBRs to date, demonstrating spectral linewidth values lower than 40 kHz.
Keywords :
III-V semiconductors; aluminium compounds; claddings; diffraction gratings; distributed Bragg reflector lasers; etching; gallium arsenide; laser modes; quantum well lasers; spectral line narrowing; waveguide lasers; 850 to 860 nm; AlGaAs-GaAs; AlGaAs-GaAs material system; asymmetric cladding; distributed Bragg reflector lasers; first-order surface grating; narrow-linewidth cladding; quantum well lasers; ridge-waveguide lasers; semiconductor lasers; single-mode operation; spectral linewidth; spectroscopic applications; surface etched gratings; Distributed Bragg reflectors; Distributed feedback devices; Etching; Gallium arsenide; Gratings; Laser feedback; Optical waveguides; Pump lasers; Quantum well lasers; Semiconductor lasers; Asymmetric claddings; distributed Bragg reflector (DBR) lasers; semiconductor growth; semiconductor lasers; spectral linewidth;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.860393
