Title :
Enhanced resonant tunneling real-space transfer in δ-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD
Author :
Wu, Chang-Luen ; Hsu, Wei-Chou
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
2/1/1996 12:00:00 AM
Abstract :
We report the observation of pronounced N-shaped negative differential resistance (NDR) and negative transconductance at high drain and gate fields in δ-doped GaAs/InGaAs gated dual-channel transistors (DCTs) by tunneling real-space transfer (TRST). By virtue of varying the sheet density of the δ-doping layer as well as the thickness of the GaAs barrier, pronounced multiple-state NDR characteristics were obtained accompanying the gate current characteristic at room temperature. A peak-to-valley current ratio (PVR) of 15 was obtained which, to our knowledge, is the highest among the reported TRST devices at room temperature. The proposed devices possess potential advantages of ease of growth and fabrication
Keywords :
CVD coatings; III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; negative resistance devices; resonant tunnelling transistors; semiconductor doping; semiconductor growth; δ-doped GaAs/InGaAs gated dual-channel transistors; GaAs-InGaAs; MOCVD growth; N-shaped negative differential resistance; fabrication; gate current; multiple-state NDR characteristics; negative transconductance; peak-to-valley current ratio; resonant tunneling real-space transfer; Electrodes; Electron emission; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFET circuits; Resonant tunneling devices; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
