Title :
Numerical analysis of frequency dispersion of transconductance in GaAs MESFETs
Author :
Lo, Shih-Hsien ; Lee, Chien-Ping
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
fDate :
2/1/1996 12:00:00 AM
Abstract :
A fully two-dimensional numerical model for the transconductance dispersion in GaAs MESFETs is presented. According to simulated results, the dominating surface traps belong to the hole trap type in order to obtain consistent results with reported measurements. The AC frequency-dependent modulation of negative surface charge can explain this anomalous phenomenon. The holes injecting from and emitting out of the gate metal electrode interact with the surface hole traps, and result in the change of the gate-to-source and the gate-to-drain resistances, which in turn cause the change in transconductance. The gate voltage and the gate length effects on the dispersion are also considered. Good agreement with reported results is obtained
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; semiconductor device models; surface states; AC modulation; GaAs; GaAs MESFET; frequency dispersion; gate length; gate voltage; gate-to-drain resistance; gate-to-source resistance; negative surface charge; numerical analysis; surface hole traps; transconductance; two-dimensional model; Dispersion; Electrical resistance measurement; Electrodes; Frequency modulation; Gallium arsenide; MESFETs; Numerical analysis; Numerical models; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
