Title :
Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors
Author_Institution :
Corporate R&D, Texas Instrum. Inc., Dallas, TX, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
We report the failure mechanisms resulting in the second breakdown characteristics found in AlGaAs/GaAs power heterojunction bipolar transistors (HBTs). The dominant failure mechanism is identified to be the increasingly larger base-collector leakage current at elevated junction temperatures. This failure mechanism is compared with those found in silicon bipolar transistors
Keywords :
III-V semiconductors; aluminium compounds; failure analysis; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; AlGaAs-GaAs; AlGaAs/GaAs power heterojunction bipolar transistors; base-collector leakage current; elevated junction temperature; failure; second breakdown; Bipolar transistors; Breakdown voltage; Current measurement; Electric breakdown; Failure analysis; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
