DocumentCode
1245073
Title
Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors
Author
Liu, William
Author_Institution
Corporate R&D, Texas Instrum. Inc., Dallas, TX, USA
Volume
43
Issue
2
fYear
1996
fDate
2/1/1996 12:00:00 AM
Firstpage
220
Lastpage
227
Abstract
We report the failure mechanisms resulting in the second breakdown characteristics found in AlGaAs/GaAs power heterojunction bipolar transistors (HBTs). The dominant failure mechanism is identified to be the increasingly larger base-collector leakage current at elevated junction temperatures. This failure mechanism is compared with those found in silicon bipolar transistors
Keywords
III-V semiconductors; aluminium compounds; failure analysis; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; AlGaAs-GaAs; AlGaAs/GaAs power heterojunction bipolar transistors; base-collector leakage current; elevated junction temperature; failure; second breakdown; Bipolar transistors; Breakdown voltage; Current measurement; Electric breakdown; Failure analysis; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.481721
Filename
481721
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