• DocumentCode
    1245090
  • Title

    Giant magneto-impedance in Co-rich amorphous wires and films

  • Author

    Panina, L.V. ; Mohri, K. ; Uchiyama, T. ; Noda, M. ; Bushida, K.

  • Author_Institution
    Dept. of Electr. Eng., Nagoya Univ., Japan
  • Volume
    31
  • Issue
    2
  • fYear
    1995
  • fDate
    3/1/1995 12:00:00 AM
  • Firstpage
    1249
  • Lastpage
    1260
  • Abstract
    A comprehensive analysis of magneto impedance (MI) phenomena in Co-rich amorphous materials is presented on the basis of skin effect in combination with dynamical magnetization processes. We consider a MI effect for which the domain walls are perpendicular to the current and field direction. Thus, the magnetization induced by current proceeds, via both the wall movement and moment rotation. The magnetic responses of impedance in wires and films have some common features and can be understood from the same mechanism. The sensitivity of the magnetic response in a small sample (1 mm length and a few micrometer thickness) is about 10%/Oe in wires and 5%/Oe in films. The model describes well the existing experimental data for moderate frequencies, There is some quantitative discrepancy for the case of a very strong skin effect, where the position dependence of basic magnetostatic parameters is important.<>
  • Keywords
    amorphous magnetic materials; boron alloys; cobalt alloys; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic domain walls; magnetic domains; magnetic moments; silicon alloys; skin effect; soft magnetic materials; CoFeSiB; amorphous films; amorphous wires; domain walls; dynamical magnetization processes; giant magneto-impedance; magnetic response; magnetostatic parameters; moment rotation; skin effect; soft magnetic materials; wall movement; Amorphous magnetic materials; Amorphous materials; Impedance; Magnetic analysis; Magnetic domain walls; Magnetic domains; Magnetic films; Magnetostatics; Skin effect; Wires;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.364815
  • Filename
    364815