Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

Author

Shin, H.C. ; Lim, Ik-sung ; Racanelli, Marco ; Huang, Wen-Ling Margaret ; Foerstner, Juergen ; Hwang, Bor-yuan

Author_Institution

Adv. Technol. Center, Motorola Inc., Mesa, AZ, USA

Volume

43

Issue

2

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

318

Lastpage

325

Abstract

Emphasis toward manufacturability of thin film SOI devices has prompted more attention on partially depleted devices. In this paper, drain current transients in partially depleted SOI devices due to floating-body effects are investigated quantitatively. A one-dimensional analytical model is developed to predict the transient effect and MEDICI simulation is performed to confirm the model. With the model, the amount of the turn-on current enhancement and the turn-off current suppression are calculated. The transient characteristics can be used in investigating the quality of the SOI materials by determining the carrier lifetime. The impact of the transient effect on the device parameter extraction is described

Keywords

carrier lifetime; semiconductor device models; silicon-on-insulator; thin film devices; transient analysis; MEDICI simulation; carrier lifetime; drain current transients; floating body; one-dimensional analytical model; parameter extraction; partially depleted thin film SOI devices; turn-off current; turn-on current; Analytical models; CMOS process; CMOS technology; Immune system; Silicon on insulator technology; Substrates; Thin film devices; Time measurement; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.481734

Filename

481734