Quasi-three-dimensional modeling of a novel 2-D MESFET

Author

Hurt, M.J. ; Shur, M.S. ; Peatman, W.C.B. ; Rabkin, P.B.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

43

Issue

2

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

358

Lastpage

359

Abstract

We present a quasi-three-dimensional method for modeling novel semiconductor devices. The first step of our method is a two-dimensional numerical simulation of the device cross-section under different gate biases. Next, we use the interpolated results of the two-dimensional numerical simulation as input to the analytical theory describing the potential distribution and current in the third dimension. As an example, this method is applied to a novel two-dimensional AlGaAs/InGaAs Metal-Semiconductor Field Effect Transistor (2D MESFET)

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; indium compounds; semiconductor device models; 2D MESFET; AlGaAs-InGaAs; current; interpolation; potential distribution; quasi-three-dimensional modeling; semiconductor device; two-dimensional numerical simulation; CMOS technology; Capacitance; FETs; Gallium arsenide; MESFETs; Modems; Numerical simulation; Semiconductor device modeling; Semiconductor devices; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.481740

Filename

481740