Title :
Scaling rule for OPFET
Author :
Pal, B.B. ; Chattopadhyay, S.N.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fDate :
2/1/1996 12:00:00 AM
Abstract :
A scaling rule has been suggested to miniaturize the ion implanted GaAs optical field effect transistor (OPFET). The absorption coefficient and the generation rate have been scaled along with electrical parameters and device dimensions. Plots have been made for drain-source current, cut off frequency, and the DC power dissipation of the device
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; phototransistors; DC power dissipation; GaAs; OPFET; absorption coefficient; cutoff frequency; device dimensions; drain-source current; electrical parameters; generation rate; ion implanted MESFET; optical field effect transistor; scaling rule; Absorption; Cutoff frequency; Electron traps; FETs; Gallium arsenide; MESFETs; Particle beam optics; Power dissipation; Spontaneous emission; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
