DocumentCode
1245145
Title
Scaling rule for OPFET
Author
Pal, B.B. ; Chattopadhyay, S.N.
Author_Institution
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Volume
43
Issue
2
fYear
1996
fDate
2/1/1996 12:00:00 AM
Firstpage
368
Lastpage
369
Abstract
A scaling rule has been suggested to miniaturize the ion implanted GaAs optical field effect transistor (OPFET). The absorption coefficient and the generation rate have been scaled along with electrical parameters and device dimensions. Plots have been made for drain-source current, cut off frequency, and the DC power dissipation of the device
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; phototransistors; DC power dissipation; GaAs; OPFET; absorption coefficient; cutoff frequency; device dimensions; drain-source current; electrical parameters; generation rate; ion implanted MESFET; optical field effect transistor; scaling rule; Absorption; Cutoff frequency; Electron traps; FETs; Gallium arsenide; MESFETs; Particle beam optics; Power dissipation; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.481744
Filename
481744
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