Elliptical polarization emission from GaAlAs laser diodes in an external cavity configuration

Author

Ramanujan, Sujatha ; Agrawal, Govind P. ; Chwalek, James M. ; Winful, Herbert

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

32

Issue

2

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

213

Lastpage

221

Abstract

We report the experimental operation of an external-cavity laser capable of oscillating in TE, TM, and elliptical-polarization states. An intracavity polarizer is used to force the laser to emit polarized radiation with TE and TM components whose wavelength can be changed by rotating the polarizer, a simple model based on the Jones matrix and steady-stale rate equations is used to explain experimental data. Theoretical results for near threshold operation accurately predict the TE and TM power as a function of polarizer angle as well as the polarization dependence of wavelength

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; light polarisation; matrix algebra; optical polarisers; semiconductor lasers; GaAlAs laser diodes; Jones matrix; TE mode polarisation; TM mode polarisation; elliptical polarization emission; elliptical-polarization states; external cavity configuration; external-cavity laser; near threshold operation; polarization dependence; polarizer; polarizer angle; steady-stale rate equations; Coatings; Diode lasers; Equations; Laser modes; Laser theory; Laser transitions; Optical polarization; Polarization; Power lasers; Quantum well lasers; Tellurium; Waveguide lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.481868

Filename

481868