Title :
Influence of lateral field on the relaxation oscillation frequency of semiconductor lasers
Author :
Yu, S.F. ; Li, E. Herbert
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fDate :
1/1/1996 12:00:00 AM
Abstract :
We demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices
Keywords :
laser theory; semiconductor lasers; gain-guided devices; index-guided devices; lateral field; relaxation oscillation frequency; semiconductor lasers; Carrier confinement; Frequency; Laser modes; Laser theory; Optical waveguides; Refractive index; Semiconductor lasers; Spontaneous emission; Steady-state; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
