DocumentCode
1245650
Title
Influence of lateral field on the relaxation oscillation frequency of semiconductor lasers
Author
Yu, S.F. ; Li, E. Herbert
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Volume
32
Issue
1
fYear
1996
fDate
1/1/1996 12:00:00 AM
Firstpage
1
Lastpage
3
Abstract
We demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices
Keywords
laser theory; semiconductor lasers; gain-guided devices; index-guided devices; lateral field; relaxation oscillation frequency; semiconductor lasers; Carrier confinement; Frequency; Laser modes; Laser theory; Optical waveguides; Refractive index; Semiconductor lasers; Spontaneous emission; Steady-state; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.481913
Filename
481913
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