Title :
Design of double and triple quantum wells for InGaAs-AlAsSb intersubband unipolar semiconductor lasers
Author_Institution :
Optoelectron. Technol. Res. Lab., Kanagawa, Japan
fDate :
1/1/1996 12:00:00 AM
Abstract :
InGaAs-AlAsSb double and triple quantum well (QW) structures were designed in an effort to shorten the wavelength to less than 2 μm for possible application to intersubband unipolar lasers. Wavelengths corresponding to the intersubband separation, the minimum and maximum operating electric field, optical-phonon-limited nonradiative scattering time, and escape time from the QW were simulated. It was found that suitable nonradiative transition times can be obtained by properly designing the coupling layer thickness for both kinds of QW´s. The minimum wavelength is 1.5 μm and an operating electric field is above 130 kV/cm for wavelengths <2 μm in the double QW. On the other hand, the minimum operating electric field is less than 10 kV/cm and the minimum wavelength is about 1.7 μm for the triple QW. The triple QW is suitable for an electric-field induced wavelength tunable laser
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; indium compounds; laser theory; laser transitions; laser tuning; optical design techniques; phonons; quantum well lasers; stimulated emission; 1.5 mum; 1.7 mum; 2 mum; InGaAs-AlAsSb; InGaAs-AlAsSb intersubband unipolar semiconductor lasers; coupling layer thickness; double quantum wells; electric-field induced wavelength tunable laser; escape time; intersubband separation; maximum operating electric field; minimum operating electric field; minimum wavelength; nonradiative transition times; optical-phonon-limited nonradiative scattering time; triple quantum wells; Indium gallium arsenide; Laser transitions; Optical design; Optical scattering; Optical sensors; Particle scattering; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
