Title :
An HEMT with an integrated on-drain capacitor as basis of an hybrid mixer
Author :
Allam, R. ; Kolanowski, C. ; Theron, Didier ; Crosnier, Y.
Author_Institution :
Inst. d´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´Ascq, France
fDate :
3/1/1995 12:00:00 AM
Abstract :
This paper reports the study of an HEMT, the characteristic of which is to have a decoupling capacitor directly integrated between its drain and source electrodes. It is shown that, with an appropriate design of this basic filtering element, such a device proves to be efficient as for the realization of hybrid gate mixers. An experimental demonstration of this property is given by comparing a HEMT without capacitor with a HEMT with an integrated capacitor. For the latter, the gate length of which is 0.3 μm, it is shown that, at 18 GHz, a 5-dB improvement of conversion gain is provided by the integrated capacitor.
Keywords :
capacitors; high electron mobility transistors; hybrid integrated circuits; microwave integrated circuits; microwave mixers; 0.3 mum; 18 GHz; 5 dB; HEMT; conversion gain; decoupling capacitor; gate length; hybrid gate mixers; hybrid mixer; integrated capacitor; integrated on-drain capacitor; Capacitance; Capacitors; Circuits; Doping; FETs; Gallium arsenide; HEMTs; Impedance; Mixers; Radio frequency;
Journal_Title :
Microwave and Guided Wave Letters, IEEE