Title :
A micromachined low-power temperature-regulated bandgap voltage reference
Author :
Reay, Richard J. ; Klaassen, Erno H. ; Kovacs, Gregory T A
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
A low-power, temperature-regulated bandgap voltage reference is demonstrated in a commercial CMOS process. Low-power operation is achieved by thermally isolating a small portion of the die using a single postprocess micromachining step requiring no extra masks or modifications to the CMOS process. The reference has a 53000° C/W thermal resistance, a 2.5 ms thermal time constant, and uses 1.5 mW at 25°C. Temperature regulation improves the temperature coefficient from 100 ppm/°C to 9 ppm/°C over 0-80°C
Keywords :
CMOS analogue integrated circuits; micromachining; reference circuits; temperature control; thermal resistance; voltage control; voltage regulators; 0 to 80 C; 1.5 mW; CMOS process; bandgap voltage reference; heated substrate; low-power operation; micromachined voltage reference; postprocess micromachining step; temperature coefficient; temperature-regulated voltage reference; thermal resistance; thermal time constant; CMOS process; Circuit stability; Micromachining; Photonic band gap; Resistance heating; Temperature distribution; Temperature sensors; Thermal resistance; Thermal stability; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
