A simplified field analysis of a distributed IMPATT diode using multiple uniform layer approximation

Author

Matsumoto, Morio ; Tsutsumi, M. ; Kumagai, Naoki

Author_Institution

Dept. of Commun. Eng., Osaka Univ.

Volume

36

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1283

Lastpage

1285

Abstract

A small-signal field analysis of a distributed IMPATT diode is presented. The active region of the diode is assumed to consist of a uniform avalanche layer and avalanche-free drift layers. The propagation constant and field distributions are obtained without numerical solution of differential equations. The effects of losses caused by the presence of inactive layers are included in the analysis. Numerical examples of GaAs double-Read distributed IMPATT diodes are given which show the dependence of the amplification characteristics on the thicknesses of the avalanche and drift layers

Keywords

IMPATT diodes; amplification; losses; semiconductor device models; GaAs; active region; amplification characteristics; avalanche-free drift layers; distributed IMPATT diode; double Read diode; field distributions; inactive layers; losses; model; multiple uniform layer approximation; propagation constant; slab like device; small-signal field analysis; solid state microwave devices; uniform avalanche layer; Charge carrier processes; Conductivity; Current density; Dielectric losses; Differential equations; Frequency; Ionization; Permittivity; Propagation constant; Semiconductor diodes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3670

Filename

3670