DocumentCode :
1246618
Title :
The effects of a dielectric capacitor layer and metallization on the propagation parameters of coplanar waveguide for MMIC
Author :
Delrue, R. ; Seguinot, C. ; Pribetich, P. ; Kennis, P.
Author_Institution :
Univ. des Sci. et Tech. de Lille, Flandres Artois, Villeneuve d´´Ascq, France
Volume :
36
Issue :
8
fYear :
1988
fDate :
8/1/1988 12:00:00 AM
Firstpage :
1285
Lastpage :
1288
Abstract :
The study of coupling phenomena between lines laid on semiconductor substrates in monolithic microwave integrated circuit (MMIC) technologies and the determination of propagation effects on power FETs require the characterization of lines with micron transversal widths. For such lines, the influence of metallization thickness and dielectric cap layer on propagation properties can not be neglected. These effects are characterized for the case of coplanar lines laid on semiconductor substrates. The mathematical development used and the results obtained by a numerical technique are presented
Keywords :
guided electromagnetic wave propagation; metallisation; microwave integrated circuits; monolithic integrated circuits; waveguide theory; MMIC; characterization; coplanar waveguide; coupling phenomena; dielectric capacitor layer; metallization thickness; micron transversal widths; monolithic microwave integrated circuit; numerical technique; power FETs; propagation parameters; semiconductor substrates; Capacitors; Coupling circuits; Dielectric substrates; Integrated circuit technology; MMICs; Metallization; Microwave FET integrated circuits; Microwave integrated circuits; Microwave propagation; Monolithic integrated circuits;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.3671
Filename :
3671
Link To Document :
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