• DocumentCode
    1246648
  • Title

    Re-engineering silicon: Si-Ge heterojunction bipolar technology

  • Author

    Cressler, John D.

  • Author_Institution
    Auburn Univ., AL, USA
  • Volume
    32
  • Issue
    3
  • fYear
    1995
  • fDate
    3/1/1995 12:00:00 AM
  • Firstpage
    49
  • Lastpage
    55
  • Abstract
    Thanks to refined techniques of material growth, circuits based on Si-Ge devices have made their way to market and bode especially well for wireless communications. The author reviews material properties, HBT technologies and circuit applications
  • Keywords
    Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; semiconductor growth; semiconductor materials; HBT technologies; Si-Ge heterojunction bipolar technology; SiGe; circuit applications; high speed chips; material growth; material properties; ring oscillator; wireless communications; Capacitive sensors; Chemical vapor deposition; Cutoff frequency; Germanium silicon alloys; Heterojunctions; Lattices; Photonic band gap; Semiconductor films; Silicon germanium; Transistors;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/6.367973
  • Filename
    367973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1246648