Title :
Recent progress in bipolar transistor technology
Author :
Nakamura, Tohru ; Nishizawa, Hirotaka
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fDate :
3/1/1995 12:00:00 AM
Abstract :
Recent developments in high speed silicon bipolar device technologies are reviewed. Bipolar device structures that include polysilicon are key technologies for improving circuit characteristics. Double polysilicon bipolar device structures, in particular, have made it possible both to form shallow junctions and to reduce device dimensions. Recent progress of silicon bipolar transistor technology using SiGe and the use of the SOI technology to obtain high speed operations are also reviewed
Keywords :
bipolar transistors; semiconductor technology; silicon; silicon-on-insulator; SOI technology; Si; SiGe; circuit characteristics; double polysilicon bipolar device structures; high speed operations; shallow junctions; silicon bipolar transistor technology; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Delay effects; Frequency conversion; Germanium silicon alloys; Optical frequency conversion; Parasitic capacitance; Random access memory; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
