Title :
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
Author :
Harame, D.L. ; Comfort, J.H. ; Cressler, J.D. ; Crabbé, E.F. ; Sun, J.Y.-C. ; Meyerson, B.S. ; Tice, T.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented
Keywords :
Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; heterojunction bipolar transistors; integrated circuit technology; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; vapour phase epitaxial growth; CVD epitaxial growth; HBT device design; Si-SiGe; Si/SiGe; epitaxial-base transistors; film preparation; integrated circuit application; materials deposition; Circuits; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Physics; Semiconductor films; Semiconductor materials; Silicon germanium; Sun;
Journal_Title :
Electron Devices, IEEE Transactions on
