Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

Author

Harame, D.L. ; Comfort, J.H. ; Cressler, J.D. ; Crabbè, E.F. ; Sun, J.Y.-C. ; Meyerson, B.S. ; Tice, T.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

42

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

469

Lastpage

482

Abstract

For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-aligned device structures. The extension of SiGe device technology to high levels of integration is then discussed through a detailed review of a full SiGe HBT BiCMOS process. Finally, analog circuit design is discussed and concluded, with a description of a 12-bit Digital-to-Analog Converter presented to highlight the current status of SiGe technology

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; silicon; 12 bit; HBT BiCMOS process; Si-SiGe; Si/SiGe; analog circuit design; digital-to-analog converter; epitaxial-base transistors; nonself-aligned device structures; process integration; self-aligned device structures; Application specific integrated circuits; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Microelectronics; Paper technology; Senior members; Silicon germanium; Sun;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.368043

Filename

368043