Title :
An analytical transient model for a 1.5 V BiCMOS dynamic logic circuit for low-voltage deep submicrometer BiCMOS VLSI
Author :
Chiang, C.S. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
3/1/1995 12:00:00 AM
Abstract :
This paper presents an analytical transient model for the 1.5 V BiCMOS dynamic logic circuit using Gummel-Poon charge control model for deep submicrometer BiCMOS VLSI. Based on the analysis, the switching time of the 1.5 V BiCMOS dynamic circuit is sensitive to the forward transit time with a large load capacitance. With a small load capacitance, its switching time is related to the threshold voltage
Keywords :
BiCMOS digital integrated circuits; BiCMOS logic circuits; VLSI; integrated circuit modelling; transient analysis; 1.5 V; BiCMOS dynamic logic circuit; Gummel-Poon charge control model; VLSI; analytical transient model; forward transit time; load capacitance; low-voltage deep submicrometer BiCMOS; switching time; threshold voltage; Analytical models; BiCMOS integrated circuits; CMOS logic circuits; Capacitance; Logic circuits; Semiconductor device modeling; Switches; Switching circuits; Transient analysis; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
