Title :
Improved circuit technique to reduce hfe degradation in bipolar output drivers
Author :
Kizilyalli, Isik C. ; McAndrew, Colin C.
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
hfe degradation in bipolar transistors caused by reverse Vbe stress decreases the reliability of BiCMOS circuits. In this paper, we present an improved circuit technique to limit reverse Vbe, and thus significantly increase BiCMOS reliability. The technique also reduces the base-emitter breakdown voltage constraint on BiCMOS technology design
Keywords :
BiCMOS integrated circuits; integrated circuit design; integrated circuit measurement; integrated circuit reliability; BiCMOS circuits; base-emitter breakdown voltage constraint; bipolar output drivers; circuit technique; common emitter forward current gain; reliability; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Degradation; Driver circuits; Hafnium; Iron; MOSFETs; Stress; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
