Measurement of the thickness of dielectric thin films on silicon photodetectors using the angular response to incident linearly polarized light

Author

Azzam, R.M.A. ; Howlader, M.M.K.

Author_Institution

Dept. of Electr. Eng., New Orleans Univ., LA, USA

Volume

43

Issue

6

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

799

Lastpage

802

Abstract

A simple and accurate technique for measuring the thickness of dielectric thin films on solid state photodetectors is described. It is based on the angle-of-incidence-dependent response of the detector to incident p(TM)- or s(TE)-polarized monochromatic light. The method is applied to determine the thickness of SiO₂ films on planar-diffused Si photodiodes to within ±1 nm

Keywords

dielectric thin films; elemental semiconductors; p-i-n photodiodes; photodetectors; silicon; silicon compounds; thickness measurement; Si; Si photodetectors; Si-SiO₂; SiO₂; SiO₂ films; angle-of-incidence-dependent response; angular response; dielectric thin films; incident linearly polarized light; planar-diffused Si photodiodes; polarized monochromatic light; solid state photodetectors; thickness measurement; Dielectric measurements; Dielectric thin films; Optical films; Optical polarization; Photodetectors; Photodiodes; Reflectivity; Semiconductor films; Silicon; Thickness measurement;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.368064

Filename

368064