DocumentCode :
1247034
Title :
Microwave oscillators incorporating cryogenic sapphire dielectric resonators
Author :
Taber, R.C. ; Flory, C.A.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Volume :
42
Issue :
1
fYear :
1995
Firstpage :
111
Lastpage :
119
Abstract :
Progress is reported on efforts to develop a commercially-viable high purity X-band signal source incorporating a cryogenic sapphire dielectric resonator. The resonator design is of the whispering gallery type to take advantage of the excellent electromagnetic field confinement offered by this geometry. Complications resulting from the high spurious mode density of this type of resonator have been eliminated by developing a very accurate and complete mode analysis program which fully incorporates the dielectric anisotropies of the sapphire ring. This program allows the design of a window in the frequency domain where no unwanted modes exist, with accurate placement of the desired mode at the center of this region. Preliminary evaluation of the phase noise properties of simple oscillators incorporating these resonators have been performed. For example, in a dual-oscillator comparison of two oscillators operating near 13 GHz phase noise values of L(f)=-55 dBc/Hz, -145 dBc/Hz and -161 dBc/Hz were obtained for offset frequencies of 1 Hz, 1 kHz and 10 kHz, respectively.<>
Keywords :
cryogenic electronics; dielectric resonator oscillators; microwave oscillators; phase noise; sapphire; 13 GHz; Al/sub 2/O/sub 3/; X-band signal source; cryogenic sapphire dielectric resonators; dielectric anisotropies; electromagnetic field confinement; microwave oscillators; mode analysis program; offset frequencies; phase noise properties; spurious mode density; whispering gallery type; Cryogenics; Dielectrics; Electromagnetic fields; Frequency conversion; Microwave frequencies; Microwave oscillators; Phase noise; Radio frequency; Temperature sensors; Vibrations;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/58.368306
Filename :
368306
Link To Document :
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