Title :
Spin gain transistor in ferromagnetic semiconductors-the semiconductor Bloch-equations approach
Author :
Nikonov, Dmitri E. ; Bourianoff, George I.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
A scheme and principle of operation of a "spin gain transistor" are proposed. A large unmagnetized current creates the carrier density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization. Large magnetized current is then extracted. Thus, spin gain of >1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via semiconductor Bloch equations.
Keywords :
carrier density; ferromagnetic materials; magnetic semiconductors; magnetic transitions; magnetoelectronics; semiconductor device models; spin dynamics; spontaneous magnetisation; thin film transistors; Coulomb exchange interaction; carrier density; ferromagnetic semiconductors; ferromagnetic transition; magnetized current; semiconductor Bloch equations; spin gain transistor; spontaneous magnetization; unmagnetized current; Equations; Magnetic devices; Magnetic materials; Magnetic resonance; Magnetic semiconductors; Magnetic separation; Magnetization; Magnetoelectronics; Optical control; Polarization; Ferromagnetic materials; magnetic resonance; quantum theory; semiconductor; spintronics; transistor;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2004.837847
