Size dependence of carrier recombination efficiency in GaN quantum dots

Author

Neogi, Arup ; Everitt, Henry ; Morkoç, Hadis ; Kuroda, Takamasa ; Tackeuchi, Atsushi

Author_Institution

Dept. of Phys., Univ. of North Texas, Denton, TX, USA

Volume

4

Issue

2

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

297

Lastpage

299

Abstract

The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size.

Keywords

III-V semiconductors; electron-hole recombination; gallium compounds; nanostructured materials; photoluminescence; radiative lifetimes; semiconductor quantum dots; time resolved spectra; wide band gap semiconductors; 293 to 298 K; GaN; GaN quantum dots; PL efficiency; carrier recombination efficiency; quantum efficiency; radiative lifetime; radiative recombination; room temperature; size dependence; time-resolved photoluminescence spectroscopy; Gallium nitride; Molecular beam epitaxial growth; Photoluminescence; Physics; Plasma temperature; Quantum dots; Radiative recombination; Spectroscopy; Temperature dependence; US Department of Transportation; GaN; molecular-beam epitaxy; quantum dots (QDs); semiconductor nanostructures; time-resolved photoluminescence (PL);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2004.834170

Filename

1406009