DocumentCode :
1247320
Title :
Shielding effect of on-chip interconnect inductance
Author :
El-Moursy, Magdy A. ; Friedman, Eby G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Rochester, NY, USA
Volume :
13
Issue :
3
fYear :
2005
fDate :
3/1/2005 12:00:00 AM
Firstpage :
396
Lastpage :
400
Abstract :
Interconnect inductance introduces a shielding effect which decreases the effective capacitance seen by the driver of a circuit, reducing the gate delay. A model of the effective capacitance of an RLC load driven by a CMOS inverter is presented. The interconnect inductance decreases the gate delay and increases the time required for the signal to propagate across an interconnect, reducing the overall delay to drive an RLC load. Ignoring the line inductance overestimates the circuit delay, inefficiently oversizing the circuit driver. Considering line inductance in the design process saves gate area, reducing dynamic power dissipation. Average reductions in power of 17% and area of 29% are achieved for example circuits. An accurate model for a CMOS inverter and an RLC load is used to characterize the propagation delay. The accuracy of the delay model is within an average error of less than 9% as compared to SPICE.
Keywords :
CMOS logic circuits; RLC circuits; capacitance; driver circuits; inductance; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; shielding; CMOS inverter; RLC load; capacitance; circuit delay; circuit simulation; driver circuits; dynamic power dissipation; gate delay reduction; integrated circuit design; line inductance; on-chip interconnect inductance; propagation delay; shielding effect; Capacitance; Delay effects; Driver circuits; Inductance; Integrated circuit interconnections; Inverters; Process design; Propagation delay; RLC circuits; Semiconductor device modeling; CMOS; gate delay; interconnect modeling; on-chip inductance; propagation delay; shielding effect;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2004.842315
Filename :
1406045
Link To Document :
بازگشت