Title :
High tangential signal sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications
Author :
Hu, Zhirun ; Vo, V.T. ; Rezazadeh, Ali A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Manchester, UK
fDate :
3/1/2005 12:00:00 AM
Abstract :
Tangential signal sensitivity (TSS) of GaAs planar doped barrier (PDB) detector diodes as low as -55 dBm at 35 GHz has been achieved. In comparison with that of reported devices, this value is 6-dBm better, implying the diodes can detect much lower power hence widening the dynamic range of microwave/millimeter-wave power detectors.
Keywords :
III-V semiconductors; gallium arsenide; microwave detectors; microwave diodes; millimetre wave detectors; millimetre wave diodes; sensitivity; 3.5E10 Hz; GaAs; RF power detection; high tangential signal sensitivity planar doped barrier diodes; microwave-power detector; millimeter-wave power detector; planar doped barrier detector diodes; voltage sensitivity; Detectors; Dynamic range; Gallium arsenide; Microwave devices; Radio frequency; Schottky barriers; Schottky diodes; Semiconductor diodes; Shape control; Temperature; Detectors; RF power detection; planar doped barrier (PDB) diodes; sensors; tangential signal sensitivity (TSS); voltage sensitivity;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.844204
