Title :
A high f/sub OSC//fT ratio VCO in SiGe BiCMOS technology
Author :
Zhan, J.-H.C. ; Duster, J.S. ; Kornegay, K.T.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
A 37-GHz voltage controlled oscillator (VCO) fabricated in IBM´s 47-GHz SiGe BiCMOS technology is presented. The VCO achieves a phase noise of -81dBc/Hz at 1-MHz offset from the carrier while delivering an output power of -30dBm to 50 /spl Omega/ buffers. Drawing 15-mA of dc current from a 3-V power supply the VCO occupies 350μm×280μm of silicon area. Capacitive emitter degeneration and compact layout are used to achieve high f/sub OSC//fT ratio.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; phase noise; voltage-controlled oscillators; 15 mA; 3 V; 37 GHz; BiCMOS technology; SiGe; capacitive emitter degeneration; voltage controlled oscillator; Bandwidth; BiCMOS integrated circuits; CMOS technology; Frequency synthesizers; Germanium silicon alloys; III-V semiconductor materials; Inductors; Q factor; Silicon germanium; Voltage-controlled oscillators; Capacitive emitter degeneration; voltage controlled oscillator (VCO);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.844208
