Title :
73% CW power conversion efficiency at 50 W from 970 nm diode laser bars
Author :
Kanskar, M. ; Earles, T. ; Goodnough, T.J. ; Stiers, E. ; Botez, D. ; Mawst, L.J.
Author_Institution :
Alfalight Inc., Madison, WI, USA
fDate :
3/3/2005 12:00:00 AM
Abstract :
970 nm emitting diode laser bars of broad-waveguide design have been optimised for maximum power conversion efficiency (PCE). 73% PCE at 50 W CW output power is achieved from 20% fill-factor, 1 cm diode laser bars mounted on microchannel-cooled heatsinks. The improvement is mainly the result of an increase in injection efficiency via moderately low doping of the broad-waveguide core, and reductions in operating voltage via doping optimisation of the broad-waveguide structure.
Keywords :
III-V semiconductors; gallium arsenide; heat sinks; indium compounds; laser transitions; quantum well lasers; waveguide lasers; 50 W; 73 percent; 970 nm; CW output power; CW power conversion efficiency; InGaAs; broad-waveguide core; broad-waveguide design; broad-waveguide structure; diode laser bars; doping optimisation; maximum power conversion efficiency; microchannel-cooled heatsinks; operating voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20058260
