Title :
740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density
Author :
Lutti, J. ; Smowton, P.M. ; Lewis, G.M. ; Krysa, A.B. ; Roberts, Jeffrey S. ; Houston, P.A. ; Xin, Y.C. ; Li, Yuhua ; Lester, L.F.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., UK
fDate :
3/3/2005 12:00:00 AM
Abstract :
InP quantum-dot lasers grown on GaAs substrates and emitting in the 730-740 nm band with threshold current density as low as 190 A cm/sup -2/ for a 2000 /spl mu/m-long device with uncoated facets are reported.
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; quantum dot lasers; 2000 micron; 740 nm; GaAs; GaAs substrates; InP; InP/GaInP quantum-dot laser; room temperature threshold current density; self-assembled quantum dots; uncoated facets;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057201
