Fabrication and characterisation of solar-blind Al/sub 0.6/Ga/sub 0.4/N MSM photodetectors

Author

Biyikli, N. ; Kimukin, I. ; Tut, T. ; Aytur, O. ; Ozbay, Ekmel

Author_Institution

Dept. of Electr. Eng., Virginia Commonwealth Univ., Richmond, VA, USA

Volume

41

Issue

5

fYear

2005

fDate

3/3/2005 12:00:00 AM

Firstpage

274

Lastpage

275

Abstract

Solar-blind metal-semiconductor-metal (MSM) photodiodes based on the MOCVD-grown Al/sub 0.6/Ga/sub 0.4/N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with cutoff wavelength at /spl sim/255 nm.

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; leakage currents; metal-semiconductor-metal structures; microwave devices; photodiodes; ultraviolet detectors; Al/sub 0.6/Ga/sub 0.4/N; AlGaN; MOCVD; MSM photodiodes; UV photodetectors; aluminium gallium nitride; current-voltage measurements; leakage current; metal semiconductor metal photodiodes; microwave compatible fabrication process; optical transmission; solar-blind photodetectors; spectral responsivity; temporal pulse response; ultraviolet photodetectors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20048028

Filename

1406595