Title :
New transverse-domain formation mechanism in a quarter-micrometre-gate HEMT
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
10/13/1988 12:00:00 AM
Abstract :
Studies a quarter-micrometre-gate HEMT by a two-dimensional Monte Carlo particle simulation to gain a deeper insight into the device operation. A new transverse-domain formation due to intervalley electron transfer is predicted. The effect of domain formation on device performance and current saturation characteristics is also discussed
Keywords :
Monte Carlo methods; high electron mobility transistors; semiconductor device models; current saturation characteristics; device operation; device performance; domain formation; intervalley electron transfer; quarter-micrometre-gate HEMT; transverse-domain formation mechanism; two-dimensional Monte Carlo particle simulation;
Journal_Title :
Electronics Letters
