• DocumentCode
    1247956
  • Title

    Effects of Homogeneous and Inhomogeneous Broadening on the Dynamics of Tunneling Injection Quantum Dot Lasers

  • Author

    Gready, David ; Eisenstein, Gadi

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
  • Volume
    47
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    944
  • Lastpage
    949
  • Abstract
    We present a comprehensive model of a tunneling injection quantum dot laser. The spatially resolved model incorporates homogeneous and inhomogeneous gain broadenings, both of which are found to be important. The tunneling injection improves dynamical properties as a result of an efficient carrier injection into the laser state and also because of an effective lowering of the carrier temperature. The lower temperature yields lower carrier densities, which reduces scattering and hence narrows the homogeneous linewidth, improving the modulation response. The inhomogeneous broadening is naturally found to deteriorate the modulation response.
  • Keywords
    carrier density; optical modulation; quantum dot lasers; spectral line broadening; carrier density; carrier injection; carrier temperature; inhomogeneous gain broadenings; laser state; optical modulation; spatially resolved model; spectral linewidth; tunneling injection quantum dot lasers; Charge carrier processes; Energy states; Modulation; Nonhomogeneous media; Semiconductor lasers; Stationary state; Tunneling; Carrier dynamics; homogeneous broadening; inhomogeneous broadening; quantum dots; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2011.2134835
  • Filename
    5895000