DocumentCode :
1247989
Title :
Precipitation phenomena in and electrical resistivity of high-temperature treated langatate (La3Ta0.5Ga5.5O14)
Author :
Yaokawa, Ritsuko ; Kimura, Hiromitsu ; Aota, Katsumi ; Uda, Satoshi
Author_Institution :
Citizen Holdings Co., Ltd., Saitama, Japan
Volume :
58
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
1131
Lastpage :
1139
Abstract :
La3Ta0.5Ga5.5O14 (LTG) single crystals, which have no phase transition up to the melting point, were heat treated in air at temperatures from 1000°C to 1450°C for 10 h. LaTaO4 (LT) and LaGaO3 (LG), which coexist with LTG in the three-phase region on the Ga-poor side, precipitated on the surface of the crystal for heat treatments above 1300°C because of Ga evaporation during the heat treatment. The Ga-poor state near the surface of the 1450°C heat-treated specimen was confirmed by electron probe micro-analysis measurements. The electrical resistivity of LTG single crystals de creased by heat treatment in the range of 1000°C to 1200°C for 10 h in air, where no precipitation was observed, whereas the resistivity increased with heat treatment over 1400°C for 10 h in air. The electrical resistivity of the Ga-poor surface region was higher than that of the interior.
Keywords :
electrical resistivity; electron probe analysis; evaporation; heat treatment; lanthanum compounds; melting point; precipitation; tantalum compounds; La3Ta0.5Ga5.5O14; electrical resistivity; electron probe microanalysis; evaporation; heat treatments; high-temperature treated langatate; melting point; precipitation phenomena; temperature 1000 degC to 1450 degC; time 10 h; Crystals; Heat treatment; Resistance; Resistance heating; Surface morphology; Surface treatment;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2011.1922
Filename :
5895026
Link To Document :
بازگشت