Title :
Double Mesa Sidewall Silicon Carbide Avalanche Photodiode
Author :
Liu, Han-Din ; Zheng, Xiaoguang ; Zhou, Qiugui ; Bai, Xiaogang ; Mcintosh, Dion C. ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report a double mesa 4H-SiC avalanche photodiode (APD) that suppresses premature edge break-down. The motivation for the double mesa structure is to eliminate the optically dead region that extends radially up to 30 mum beyond the active region of conventional beveled mesa SiC APDs, which can significantly restrict the fill-factor of arrays.
Keywords :
avalanche photodiodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; SiC; active region; avalanche photodiode; double mesa sidewall silicon carbide APD; fill factor; optically dead region; premature edge breakdown; Aluminum gallium nitride; Avalanche photodiodes; Biomedical optical imaging; Dark current; Detectors; Electric breakdown; Optical arrays; Optical sensors; Photodetectors; Silicon carbide; Avalanche photodiodes; photodetector; silicon carbide; ultraviolet detector;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2022046
