• DocumentCode
    1248843
  • Title

    GaN/InGaN Heterojunction Bipolar Transistors With f_{T} > \\hbox {5} \\hbox {GHz}

  • Author

    Shen, Shyh-Chiang ; Dupuis, Russell D. ; Lee, Yi-Che ; Kim, Hee-Jin ; Zhang, Yun ; Lochner, Zachary ; Yoder, P.Douglas ; Ryou, Jae-Hyun

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    32
  • Issue
    8
  • fYear
    2011
  • Firstpage
    1065
  • Lastpage
    1067
  • Abstract
    We report GaN/InGaN n-p-n double-heterojunction bipolar transistors with the collector current density (JC) >; 16 kA/cm2 and the current gain (β) >; 24 grown on a sapphire substrate. The cutoff frequency (fT) of greater than 5 GHz and the maximum oscillation frequency (fmax) of 1.3 GHz are also measured for a GaN/InGaN heterojunction bipolar transistor at JC = 4.7 kA/cm2.
  • Keywords
    III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; wide band gap semiconductors; Al2O3; GaN-InGaN; collector current density; frequency 1.3 GHz; n-p-n double-heterojunction bipolar transistors; sapphire substrate; Aluminum gallium nitride; Double heterojunction bipolar transistors; Gallium nitride; Radio frequency; Substrates; Temperature measurement; GaN; heterojunction bipolar transistors (HBTs); radio frequency (RF);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2156378
  • Filename
    5898388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1248843