Title :
Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires
Author :
Afzalian, Aryan ; Flandre, Denis
Author_Institution :
Inf. & Commun. Technol. Electron. & Appl. Math. (ICTEAM) Inst., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
The impact of discrete random dopant fluctuations on 10-nm-long high-performance Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through nonequilibrium Green´s function quantum simulations. Using DS, nanoscale SB-FETs could outperform standard doped source and drain FETs in terms of ION/IOFF. By reintroducing dopants in SB, however, variability problems are unavoidable and will be strong, at least for thin-width SB-FETs, because of the dopant influence on the SB profile on which the tunneling current is quite sensitive.
Keywords :
Green´s function methods; MOSFET; Schottky barriers; semiconductor doping; ION-IOFF; discrete random dopant fluctuations; drain FET; high-performance SB DS nanowire MOSFET; nanoscale dopant-segregated Schottky-barrier nanowires; nonequilibrium Green function quantum simulations; standard doped source; thin-width SB-FET; tunneling current; variability problems; Doping; Logic gates; MOSFETs; Nanoscale devices; Nanowires; Silicon; Tunneling; Dopant segregation (DS); Schottky barrier (SB); nonequilibrium Green´s function (NEGF) quantum simulations; random dopant fluctuation (RDF);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2203350
