High-Performance Inverted $\hbox {In}_{0.53} \hbox {Ga}_{0.47}\hbox {As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

We report inverted-type In_0.51Al_0.49As/In_0.53Ga_0.47As MOSHEMTs heteroepitaxially grown on GaAs substrates by metal-organic chemical vapor deposition. High 2-D electron gas Hall mobility values of 8200 cm²/V · s at 300 K and 33 900 cm²/V · s at 77 K have been achieved. The buried quantum-well channel design is combined with selectively regrown source/drain (S/D) using a gate-last process. A 120-nm-channel-length MOSHEMT exhibited a maximum drain current of 1884 mA/mm, peak transconductance of 1126 mS/mm at V_ds = 0.5 V, and a subthreshold slope of 135 mV/dec at V_ds = 0.05 V. With the regrown S/D, an ultralow on-state resistance of 156 Ω·μm was obtained.