DocumentCode :
1249575
Title :
Cellular-automata models for reliability analysis of systems on silicon
Author :
Macii, Enrico ; Poncino, Massimo
Author_Institution :
Politecnico di Torino, Italy
Volume :
46
Issue :
2
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
173
Lastpage :
183
Abstract :
Reliability issues are important during the design of VLSI integrated circuits built on silicon, due to several design constraints-higher performance and frequency, device miniaturization, higher levels of on-chip integration-that must be satisfied by the final product. Digital designs are usually subject to failures due to the increased operating temperature caused by their high power dissipation. This paper addresses the problem of analyzing the reliability with respect to power consumption of digital systems constructed with CMOS technology. The solution is simulation-based, and relies on a new, cellular automaton-based model which is particularly suitable for identifying the power characteristics of a sequential design. The model is discussed in detail; it provides a homogeneous representation of all the components of the circuit. Primary inputs, flip-flops, primary outputs, and their related cones of combinational logic are modeled in the same way by means of cellular automaton cells. The model is used to analyze reliability of sequential VLSI circuits. To prove the applicability of the model, we report experimental results on some standard benchmarks taken from the literature
Keywords :
CMOS logic circuits; VLSI; cellular automata; combinational circuits; integrated circuit design; integrated circuit modelling; integrated circuit reliability; reliability theory; sequential circuits; CMOS technology; VLSI integrated circuits; cellular automaton cells; cellular-automata models; combinational logic; device miniaturization; digital designs; flip-flops; high power dissipation; increased operating temperature; on-chip integration; power consumption; primary inputs; primary outputs; reliability analysis; sequential design; CMOS technology; Frequency; Integrated circuit reliability; Power system modeling; Power system reliability; Product design; Semiconductor device modeling; Silicon; Temperature; Very large scale integration;
fLanguage :
English
Journal_Title :
Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9529
Type :
jour
DOI :
10.1109/24.589944
Filename :
589944
Link To Document :
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