Title :
High-efficiency electroabsorption in quaternary AlGaInAs quantum-well optical modulators
Author :
Wakita, Ken ; Kotaka, I. ; Asai, Hiroki ; Nojima, S. ; Mikami, Osamu
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
10/13/1988 12:00:00 AM
Abstract :
Quaternary AlGaInAs quantum-well optical modulators operating at 1.55 μm are introduced and demonstrated for the first time. An electron-to-heavy-hole exciton absorption peak shift of over 600 Å is observed for a bias voltage of 6 V. An extinction ratio of 19 dB and high-speed operation over 4 GHz is obtained for this optical modulator
Keywords :
aluminium compounds; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical modulation; 1.55 micron; 6 V; AlGaInAs; electroabsorption; electron-to-heavy-hole exciton absorption peak shift; extinction ratio; high-speed operation; quantum-well optical modulators;
Journal_Title :
Electronics Letters
