A charge conserving non-quasi-state (NQS) MOSFET model for SPICE transient analysis

Author

Park, Hong-June ; Ko, Ping Keung ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

10

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

629

Lastpage

642

Abstract

An analytic charge-conserving non-quasi-static (NQS) model is derived for long-channel MOSFETs and has been implemented in SPICE3. The model is based on approximate solutions to the transient current continuity equation, an analytic equations are derived for node charges using the charge-sheet formulation. The NQS effects in several test circuits, which include a pass transistor, a CMOS inverter chain, and a differential sample-hold circuit, are stimulated. Excellent agreements have been observed among this work, PISCES (2-D device simulation), the 1-D numerical simulation, the multiple lump model, and CODECS (a mixed device and circuit simulation). However, large differences have been observed between this work and conventional quasi-static (QS) models. The model computation time of this work implemented in SPICE3 is about 2-3 times larger than those of QS models (BSIM, Level-2 Meyer) in SPICE3

Keywords

circuit analysis computing; insulated gate field effect transistors; semiconductor device models; transient response; MOSFET model; NQS effects; SPICE transient analysis; SPICE3; approximate solutions; charge conserving; charge-sheet formulation; long-channel MOSFETs; model computation time; node charges; nonquasistatic model; transient current continuity equation; Circuit simulation; Circuit testing; Computational modeling; Equations; Inverters; MOSFET circuits; Numerical simulation; SPICE; Semiconductor device modeling; Transient analysis;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.79500

Filename

79500