• DocumentCode
    1249800
  • Title

    High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs

  • Author

    Deguchi, Tadayoshi ; Kikuchi, Toshikatsu ; Arai, Manabu ; Yamasaki, Kimiyoshi ; Egawa, Takashi

  • Author_Institution
    Technol. Dev. Headquarters, New Japan Radio Co., Ltd., Fujimino, Japan
  • Volume
    33
  • Issue
    9
  • fYear
    2012
  • Firstpage
    1249
  • Lastpage
    1251
  • Abstract
    An excellent on/off current ratio of 1010 and a nearly ideal subthreshold slope of 65 mV/dec was confirmed in a p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable I-V characteristics were achieved with the p-InGaN cap layer under the gate electrode. A dry etching technique with a low-damage p-InGaN cap layer resulted in a significantly low leakage current of 10-11 A/mm.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; HEMT; I-V characteristics; InGaN-AlGaN-GaN; dry etching technique; gate electrode; high on-off current ratio; high-electron-mobility transistor; low leakage current; low-damage p-cap layer; Aluminum gallium nitride; Etching; Gallium nitride; HEMTs; Logic gates; MODFETs; Plasmas; AlGaN/GaN high-electron-mobility transistor (HEMT); gate leakage current; on/off current ratio; p-InGaN;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2204854
  • Filename
    6248156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1249800