Photovoltaic-p-i-n diodes for RF control-switching application

Author

Sun, C.K. ; Chang, C.T. ; Nguyen, R. ; Albares, D.J.

Author_Institution

SPAWAR Syst. Center, US Navy, San Diego, CA, USA

Volume

47

Issue

10

fYear

1999

fDate

10/1/1999 12:00:00 AM

Firstpage

2034

Lastpage

2036

Abstract

A photovoltaic-p-i-n diode switch, consisting of two back-to-back p-i-n diodes which can be forward biased to the ON state by photovoltaic cell photocurrents, is introduced for optically controlling RF signals. Without light, the switch is in the OFF state and isolation is determined by the diode junction capacitance. We report a device operating in the VHF range and handling 25 W. With 40 mA photocurrent injected into each diode, the measured insertion loss at 25-W input power is ≈0.08 dB, mainly limited by the diode series resistance; its capacitance was 380 fF. Experiments indicate that low insertion loss requires the signal period ≪ carrier lifetime so that carrier sweep out in the I-region does not reduce conductivity

Keywords

capacitance; carrier lifetime; p-i-n photodiodes; photoconducting switches; photovoltaic cells; 0.08 dB; 25 W; 380 fF; 40 mA; I-region; RF control; VHF range; carrier lifetime; diode junction capacitance; diode series resistance; insertion loss; p-i-n diode switch; photovoltaic cell photocurrents; photovoltaic-p-i-n diodes; signal period; switching application; Capacitance; Insertion loss; Optical control; Optical switches; P-i-n diodes; Photoconductivity; Photovoltaic cells; Photovoltaic systems; Radio frequency; Solar power generation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.795081

Filename

795081