DocumentCode :
1249864
Title :
Crystallographic Characterization of an Electroplated Zinc Coating Prone to Whiskers
Author :
Etienne, Auriane ; Cadel, Emmanuel ; Lina, Agnès ; Cretinon, Laurent ; Pareige, Philippe
Author_Institution :
Groupe de Phys. des Mater., Univ. de Rouen, St. Etienne du Rouvray, France
Volume :
2
Issue :
11
fYear :
2012
Firstpage :
1928
Lastpage :
1932
Abstract :
A Zn-electroplated steel prone to Zn whiskers has been investigated in order to obtain information about the microstructure of the Zn coating at the root of a whisker. Indeed, the characterization of the Zn coating is essential to understand the Zn whisker growth mechanism. Care was taken to prepare a sample at a whisker root by using a focused-ion beam in a dual-beam scanning electron microscope. The sample was analyzed using energy dispersive X-ray spectrometry and electron backscattered diffraction. Results show three different regions: 1) an inclusion enriched with Ca, Al, and C; 2) the Zn coating with columnar grains; and 3) the root of the whisker. An important point is that recrystallized grains are found at the whisker root. This observation supports recent whisker growth models based on recrystallization.
Keywords :
X-ray chemical analysis; electron backscattering; electroplated coatings; electroplating; grain size; recrystallisation; scanning electron microscopy; whiskers (crystal); zinc; Zn; crystallographic properties; dual-beam scanning electron microscopy; electron backscattered diffraction; electroplating; energy dispersive X-ray spectrometry; grain size; microstructure; recrystallization; whisker growth mechanism; zinc coating; Coatings; Diffraction; Grain boundaries; Steel; Surface treatment; Tin; Zinc; Electron scattering diffraction; Zn whiskers; electroplating; focused-ion beam; recrystallization;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2012.2203134
Filename :
6248176
Link To Document :
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